BS170FTA, Транзистор: N-MOSFET, полевой, 60В, 0,15мА, 0,33Вт, SOT23
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
360 руб.
от 5 шт. —
130 руб.
от 25 шт. —
100 руб.
от 100 шт. —
77.51 руб.
Добавить в корзину 1 шт.
на сумму 360 руб.
Описание
Описание Транзистор: N-MOSFET, полевой, 60В, 0,15мА, 0,33Вт, SOT23 Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.00015 |
Maximum Drain Source Resistance (mOhm) | 5000@10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 330 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | DMOS |
Product Category | Small Signal |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Typical Input Capacitance @ Vds (pF) | 60@10V |
Typical Turn-Off Delay Time (ns) | 10(Max) |
Typical Turn-On Delay Time (ns) | 10(Max) |
Maximum Continuous Drain Current | 150 mA |
Maximum Drain Source Resistance | 5 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 3V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 330 mW |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 1.4mm |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 200 mS |
Id - Continuous Drain Current: | 150 uA |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 330 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 5 Ohms |
Series: | BS170F |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 10 ns |
Typical Turn-On Delay Time: | 10 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 0.03 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов