RFD16N05LSM9A, Транзистор: N-MOSFET, полевой, 50В, 16А, 60Вт, DPAK
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Описание
Описание Транзистор: N-MOSFET, полевой, 50В, 16А, 60Вт, DPAK Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 16 A |
| Maximum Drain Source Resistance | 47 mΩ |
| Maximum Drain Source Voltage | 50 V |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 60 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | MegaFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V |
| Width | 6.22mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 14 ns |
| Id - Continuous Drain Current: | 16 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Part # Aliases: | RFD16N05LSM9A_NL |
| Pd - Power Dissipation: | 60 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 80 nC |
| Rds On - Drain-Source Resistance: | 47 mOhms |
| Rise Time: | 30 ns |
| Series: | RFD16N05LSM |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 42 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 175 °C |
| RDS-on | 47@5V mOhm |
| Typical Fall Time | 14 ns |
| Typical Rise Time | 30 ns |
| Typical Turn-Off Delay Time | 42 ns |
| Typical Turn-On Delay Time | 14 ns |
| Вес, г | 0.26 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
