SUM70040E-GE3

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930 руб.

от 2 шт. — 820 руб.

от 3 шт. — 760 руб.

Добавить в корзину 1 шт. на сумму 930 руб.

Номенклатурный номер: 8002741690

Электроэлемент

Описание Транзистор N-MOSFET, полевой, 100В, 120А, 125Вт, D2PAK Характеристики

Brand	Vishay/Siliconix
Channel Mode	Enhancement
Configuration	1 N-Channel
Factory Pack Quantity	800
Fall Time	15 ns
Forward Transconductance - Min	82 S
Height	4.83 mm
Id - Continuous Drain Current	120 A
Length	10.67 mm
Manufacturer	Vishay
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-263-3
Packaging	Cut Tape
Pd - Power Dissipation	375 W
Product Category	MOSFET
Qg - Gate Charge	120 nC
Rds On - Drain-Source Resistance	0.0032 Ohms
Rise Time	22 ns
RoHS	Details
Series	SUM
Technology	Si
Tradename	TrenchFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	55 ns
Typical Turn-On Delay Time	15 ns
Unit Weight	0.068654 oz
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Width	9.65 mm
Channel Type	N
Forward Diode Voltage	1.5V
Maximum Continuous Drain Current	120 A
Maximum Drain Source Resistance	4.6 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	375 W
Minimum Gate Threshold Voltage	2.5V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	76 nC @ 10 V
Вес, г	1.75