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STL3NM60N

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см. техническую документацию

11 шт. со склада г.Москва, срок 6-7 дней

600 руб.

от 2 шт. — 490 руб.

от 5 шт. — 421 руб.

от 10 шт. — 390 руб.

Добавить в корзину 1 шт. на сумму 600 руб.

Альтернативные предложения4

Номенклатурный номер: 8002905730

Бренд: STMicroelectronics

Описание

Электроэлемент

MOSFET, N-CH, 600V, 2.2A, POWERFLAT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:22W; Transistor Case Style:PowerFLAT; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:Mdmesh II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)

Технические параметры

Brand	STMicroelectronics
Channel Mode	Enhancement
Factory Pack Quantity	3000
Fall Time	20 ns
Id - Continuous Drain Current	2.2 A
Manufacturer	STMicroelectronics
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	PowerFLAT-3.3x3.3-HV-8
Packaging	Reel
Pd - Power Dissipation	2 W
Product Category	MOSFET
Qg - Gate Charge	9.5 nC
Rds On - Drain-Source Resistance	1.8 Ohms
Rise Time	6.2 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20.8 ns
Typical Turn-On Delay Time	8.6 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	4 V
Automotive	No
Channel Type	N
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	No Lead
Maximum Continuous Drain Current (A)	0.65
Maximum Drain Source Resistance (mOhm)	1800 10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±25
Maximum Gate Threshold Voltage (V)	4
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Part Status	Active
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	MDmesh
Supplier Package	Power Flat
Typical Fall Time (ns)	20
Typical Gate Charge @ 10V (nC)	9.5
Typical Gate Charge @ Vgs (nC)	9.5 10V
Typical Input Capacitance @ Vds (pF)	188 50V
Typical Rise Time (ns)	6.2
Typical Turn-Off Delay Time (ns)	20.8
Typical Turn-On Delay Time (ns)	8.6
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	20 ns
Id - Continuous Drain Current:	2.2 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	PowerFLAT-3.3x3.3-HV-8
Pd - Power Dissipation:	2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	9.5 nC
Rds On - Drain-Source Resistance:	1.8 Ohms
Rise Time:	6.2 ns
Series:	STL3NM60N
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	20.8 ns
Typical Turn-On Delay Time:	8.6 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	0.01