TC6320TG-G
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см. техническую документацию
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Описание
Электроэлемент
Описание Логика, ПЛИС и ПАИС Характеристики | Категория | Микросхема |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | NIP |
| Maximum Drain Source Resistance - (mOhm) | 7000@10V@N ChannelI8000@10V@P Channel |
| Maximum Drain Source Voltage - (V) | 200 |
| Maximum Gate Threshold Voltage - (V) | 2 |
| Military | No |
| Number of Elements per Chip | 2 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Standard Package Name | SOP |
| Supplier Package | SOIC N |
| Typical Input Capacitance @ Vds - (pF) | 110(Max)@25V@N ChannelI200(Max)@25V@P Channel |
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3300 |
| Fall Time: | 15 ns |
| Forward Transconductance - Min: | 400 mmho |
| Id - Continuous Drain Current: | 2 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 8 Ohms, 7 Ohms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Drain Source Resistance (mOhm) | 7000@10V@N Channel|8000@10V@P Channel |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum IDSS (uA) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 15 |
| Typical Input Capacitance @ Vds (pF) | 110(Max)@25V@N Channel|200(Max)@25V@P Channel |
| Typical Rise Time (ns) | 15 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Вес, г | 0.545 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
