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TP2540N8-G

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840 руб.

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Добавить в корзину 1 шт. на сумму 840 руб.

Номенклатурный номер: 8002971995

Бренд: Microchip Technology

Описание

Электроэлемент

D-MOSFET, P-CH, -0.125A, -400V, TO-243AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-125mA; Drain Source Voltage Vds:-400V; On Resistance Rds(on):19ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	125mA(Tj)
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	125pF @ 25V
Manufacturer	Microchip Technology
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-243AA
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	1.6W(Ta)
Rds On (Max) @ Id, Vgs	25 Ohm @ 100mA, 10V
Series	-
Supplier Device Package	TO-243AA(SOT-89)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2000
Fall Time:	13 ns
Forward Transconductance - Min:	100 mS
Id - Continuous Drain Current:	125 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-89-3
Pd - Power Dissipation:	1.6 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	25 Ohms
Rise Time:	10 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	400 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Flat
Material	Si
Maximum Continuous Drain Current (A)	0.125
Maximum Drain Source Resistance (mOhm)	25000@10V
Maximum Drain Source Voltage (V)	400
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.4
Maximum IDSS (uA)	10
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1600
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
PCB changed	3
Pin Count	4
PPAP	No
Process Technology	DMOS
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-89
Tab	Tab
Typical Fall Time (ns)	13(Max)
Typical Input Capacitance @ Vds (pF)	60@25V
Typical Rise Time (ns)	10(Max)
Typical Turn-Off Delay Time (ns)	20(Max)
Typical Turn-On Delay Time (ns)	10(Max)
Forward Diode Voltage	1.8V
Maximum Continuous Drain Current	125 mA
Maximum Drain Source Resistance	30 Ω
Maximum Drain Source Voltage	400 V
Maximum Gate Source Voltage	20 V
Maximum Gate Threshold Voltage	2.4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.6 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Package Type	TO-243AA
Transistor Configuration	Single
Width	2.6mm
Вес, г	0.05