SIR680DP-T1-RE3
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Описание
Электроэлемент
MOSFET, N-CH, 80V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 100A(Tc) |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 81nC @ 7.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150pF @ 40V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | PowerPAKВ® SO-8 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 104W(Tc) |
| Rds On (Max) @ Id, Vgs | 2.9 mOhm @ 20A, 10V |
| Series | TrenchFETВ® Gen IV |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.1V |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 3.4 mΩ |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3.4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 104 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK SO-8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 69.5 nC @ 10 V |
| Width | 5.26mm |
| Вес, г | 0.5066 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
