FDD4243

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330 руб.
от 2 шт.240 руб.
от 3 шт.198 руб.
Добавить в корзину 1 шт. на сумму 330 руб.
Номенклатурный номер: 8002983411

Описание

Электроэлемент
MOSFET, P CH, -40V, -14A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-14A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:42W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C

Технические параметры

Brand ON Semiconductor/Fairchild
Channel Mode Enhancement
Configuration Single
Factory Pack Quantity 2500
Fall Time 7 ns
Forward Transconductance - Min 16 S
Height 2.39 mm
Id - Continuous Drain Current -6.7 A
Length 6.73 mm
Manufacturer ON Semiconductor
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case TO-252-3
Packaging Reel
Pd - Power Dissipation 42 W
Product Category MOSFET
Rds On - Drain-Source Resistance 44 mOhms
Rise Time 15 ns
RoHS Details
Series FDD4243
Technology Si
Tradename PowerTrench
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Type Power Mosfet
Typical Turn-Off Delay Time 22 ns
Typical Turn-On Delay Time 6 ns
Unit Weight 0.009184 oz
Vds - Drain-Source Breakdown Voltage -40 V
Vgs - Gate-Source Voltage 20 V
Width 6.22 mm
Automotive No
Channel Type P
ECCN (US) EAR99
EU RoHS Compliant with Exemption
Lead Shape Gull-wing
Material Si
Maximum Continuous Drain Current (A) 6.7
Maximum Drain Source Resistance (mOhm) 44@10V
Maximum Drain Source Voltage (V) 40
Maximum Gate Source Voltage (V) ±20
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 42000
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Part Status Active
PCB changed 2
Pin Count 3
PPAP No
Process Technology TMOS
Standard Package Name TO-252
Supplier Package DPAK
Tab Tab
Typical Fall Time (ns) 7
Typical Gate Charge @ 10V (nC) 21
Typical Gate Charge @ Vgs (nC) 21@10V
Typical Input Capacitance @ Vds (pF) 1165@20V
Typical Rise Time (ns) 15
Typical Turn-Off Delay Time (ns) 22
Typical Turn-On Delay Time (ns) 6
Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 7 ns
Forward Transconductance - Min: 16 S
Id - Continuous Drain Current: 6.7 A
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: DPAK-3
Pd - Power Dissipation: 42 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 29 nC
Rds On - Drain-Source Resistance: 44 mOhms
Rise Time: 15 ns
Series: FDD4243
Subcategory: MOSFETs
Technology: Si
Tradename: PowerTrench
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Type: Power MOSFET
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 6 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Вес, г 0.66

Техническая документация

Datasheet
pdf, 358 КБ
Datasheet
pdf, 399 КБ
Документация
pdf, 546 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов