FJV992FMTF
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Описание
Электроэлемент
TRANSISTOR, PNP, -120V, -0.05A, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-50mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
Brand | ON Semiconductor/Fairchild |
Collector- Base Voltage VCBO | -120 V |
Collector- Emitter Voltage VCEO Max | -120 V |
Collector-Emitter Saturation Voltage | -300 mV |
Configuration | Single |
Continuous Collector Current | -0.05 A |
DC Collector/Base Gain hfe Min | 200 |
DC Current Gain hFE Max | 800 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 50 MHz |
Height | 0.93 mm |
Length | 2.92 mm |
Manufacturer | ON Semiconductor |
Maximum DC Collector Current | 0.05 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 |
Packaging | Reel |
Pd - Power Dissipation | 0.3 W |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | FJV992 |
Transistor Polarity | PNP |
Width | 1.3 mm |
Product Type | BJTs-Bipolar Transistors |
Subcategory | Transistors |
Brand: | onsemi/Fairchild |
Collector- Base Voltage VCBO: | 120 V |
Collector- Emitter Voltage VCEO Max: | 120 V |
Collector-Emitter Saturation Voltage: | 300 mV |
Configuration: | Single |
Continuous Collector Current: | -50 mA |
DC Collector/Base Gain hfe Min: | 200 |
DC Current Gain hFE Max: | 800 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 50 MHz |
Manufacturer: | onsemi |
Maximum DC Collector Current: | 50 mA |
Maximum Operating Temperature: | +150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 300 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | FJV992 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Collector Emitter Voltage Max | 120В |
DC Current Gain hFE Min | 300hFE |
DC Усиление Тока hFE | 300hFE |
Power Dissipation | 300мВт |
Количество Выводов | 3вывод(-ов) |
Максимальная Рабочая Температура | 150°C |
Монтаж транзистора | Surface Mount |
Полярность Транзистора | PNP |
Стиль Корпуса Транзистора | SOT-23 |
Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
Частота Перехода ft | 50МГц |
Maximum Collector Base Voltage | -120 V |
Maximum Collector Emitter Voltage | -120 V |
Maximum Emitter Base Voltage | -5 V |
Maximum Operating Frequency | 50 MHz |
Maximum Power Dissipation | 300 mW |
Minimum DC Current Gain | 300 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Type | PNP |
Вес, г | 0.4 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 192 КБ
Datasheet
pdf, 75 КБ
Datasheet FJV992FMTF
pdf, 192 КБ
Datasheet FJV992FMTF
pdf, 193 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов