NDS352AP
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см. техническую документацию
см. техническую документацию
160 руб.
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110 руб.
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83 руб.
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68.93 руб.
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Описание
Электроэлемент
FETS - SINGLE; Transistor Polarity:P Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.7V; Power Dissipation
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 17 ns, 16 ns |
| Height | 1.12 mm |
| Id - Continuous Drain Current | -900 mA |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SSOT-3 |
| Packaging | Reel |
| Part # Aliases | NDS352AP_NL |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 500 mOhms |
| Rise Time | 17 ns, 16 ns |
| RoHS | Details |
| Series | NDS352AP |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 5 ns, 8 ns |
| Unit Weight | 0.001058 oz |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.4 mm |
| Channel Type | P |
| Maximum Continuous Drain Current | 900 mA |
| Maximum Drain Source Resistance | 0.5 Ω |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 20V |
| Maximum Power Dissipation | 500 mW |
| Minimum Gate Threshold Voltage | 0.8V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V |
| Вес, г | 0.035 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
