FDMS86322

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820 руб.

от 2 шт. — 700 руб.

от 5 шт. — 622 руб.

от 10 шт. — 582.50 руб.

Добавить в корзину 1 шт. на сумму 820 руб.

Номенклатурный номер: 8002984688

Электроэлемент

13 A, 80 V, 0.00765 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA

Current - Continuous Drain (Id) @ 25В°C	13A(Ta), 60A(Tc)
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 50V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	8-PowerTDFN
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	2.5W(Ta), 104W(Tc)
Rds On (Max) @ Id, Vgs	7.65 mOhm @ 13A, 10V
Series	PowerTrenchВ®
Supplier Device Package	8-PQFN(5x6)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Fall Time:	13 ns
Forward Transconductance - Min:	45 S
Id - Continuous Drain Current:	13 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	Power-56-8
Pd - Power Dissipation:	104 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	55 nC
Rds On - Drain-Source Resistance:	7.65 mOhms
Rise Time:	20 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	0.09

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