FDB13AN06A0

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720 руб.

от 2 шт. — 610 руб.

от 5 шт. — 532 руб.

от 10 шт. — 497.50 руб.

Добавить в корзину 1 шт. на сумму 720 руб.

Номенклатурный номер: 8002985023

Электроэлемент

Power Field-Effect Transistor, 62A, 60V, 0.0135ohm, N-Channel, MOSFET, TO-263AB

Channel Mode	Enhancement
Continuous Drain Current	10.9(A)
Drain-Source On-Volt	60(V)
Gate-Source Voltage (Max)	'±20(V)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 175C
Operating Temperature Classification	Military
Package Type	D2PAK
Packaging	Tape and Reel
Pin Count	2+Tab
Polarity	N
Power Dissipation	115(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	800
Fall Time:	26 ns
Id - Continuous Drain Current:	62 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SC-70-3
Part # Aliases:	FDB13AN06A0_NL
Pd - Power Dissipation:	115 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	29 nC
Rds On - Drain-Source Resistance:	11.5 mOhms
Rise Time:	96 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	44 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	2.7