FDP42AN15A0
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 150В, 24А, 150Вт, TO220AB Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Current - Continuous Drain (Id) @ 25°C | 5A(Ta), 35A(Tc) |
Drain to Source Voltage (Vdss) | 150V |
Family | Transistors-FETs, MOSFETs-Single |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Gate Charge (Qg) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
Manufacturer | Fairchild-Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C(TJ) |
Package / Case | TO-220-3 |
Packaging | Tube |
Power - Max | 150W |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 12A, 10V |
Series | PowerTrench® |
Standard Package | 50 |
Supplier Device Package | TO-220-3 |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 23 ns |
Id - Continuous Drain Current: | 35 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Part # Aliases: | FDP42AN15A0_NL |
Pd - Power Dissipation: | 150 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 36 nC |
Rds On - Drain-Source Resistance: | 80 mOhms |
Rise Time: | 19 ns |
Series: | FDP42AN15A0 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 27 ns |
Typical Turn-On Delay Time: | 11 ns |
Vds - Drain-Source Breakdown Voltage: | 150 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 5 A |
Maximum Drain Source Resistance | 42 mΩ |
Maximum Drain Source Voltage | 150 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 150 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | TO-220AB |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 30 nC @ 10 V |
Width | 4.83mm |
Вес, г | 2.003 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 458 КБ
Datasheet FDP42AN15A0
pdf, 258 КБ
Документация
pdf, 698 КБ
Дополнительная информация
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