HUF75332P3

Изображения служат только для ознакомления,
см. техническую документацию

630 руб.

от 2 шт. — 520 руб.

от 5 шт. — 440 руб.

от 10 шт. — 407.50 руб.

Добавить в корзину 1 шт. на сумму 630 руб.

Номенклатурный номер: 8002989649

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 55В, 60А, 145Вт, TO220AB Характеристики

Channel Mode	Enhancement
Continuous Drain Current	60(A)
Drain-Source On-Volt	55(V)
Gate-Source Voltage (Max)	'±20(V)
Mounting	Through Hole
Number of Elements	1
Operating Temp Range	-55C to 175C
Operating Temperature Classification	Military
Package Type	TO-220
Packaging	Rail/Tube
Pin Count	3+Tab
Polarity	N
Power Dissipation	145(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	45 ns
Id - Continuous Drain Current:	60 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Part # Aliases:	HUF75332P3_NL
Pd - Power Dissipation:	145 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	85 nC
Rds On - Drain-Source Resistance:	19 mOhms
Rise Time:	90 ns
Series:	HUF75332P3
Subcategory:	MOSFETs
Technology:	Si
Tradename:	UltraFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	55 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	1.96

pdf, 828 КБ

Мы рекомендуем