FDC8878

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420 руб.

от 2 шт. — 330 руб.

от 5 шт. — 266 руб.

от 10 шт. — 243.18 руб.

Добавить в корзину 1 шт. на сумму 420 руб.

Номенклатурный номер: 8002990000

Электроэлемент

FDC8878 Series 30 V 8 A 16 mOhm SMT N-Channel Power Trench Mosfet - SSOT-6

Current - Continuous Drain (Id) @ 25В°C	8A(Ta), 8A(Tc)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1040pF @ 15V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	1.6W(Ta)
Rds On (Max) @ Id, Vgs	16 mOhm @ 8A, 10V
Series	PowerTrenchВ®
Supplier Device Package	SuperSOTв(ў-6
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	3V @ 250ВµA
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	8 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SSOT-6
Pd - Power Dissipation:	800 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	18 nC
Rds On - Drain-Source Resistance:	16 mOhms
Series:	FDC8878
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V