Главная › Электронные компоненты › Транзисторы › Биполярные (BJTs) › ON Semiconductor › SBC807-40WG

SBC807-40WG

Изображения служат только для ознакомления,
см. техническую документацию

110 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 62 руб.

от 10 шт. — 52 руб.

Добавить в корзину 2 шт. на сумму 220 руб.

Номенклатурный номер: 8002990326

Бренд: ON Semiconductor***

Описание

Электроэлемент

ON Semi SBC807-40WT1G PNP Bipolar Transistor, 0.5 A, 45 V, 3-Pin SC-70 | ON Semiconductor SBC807-40WT1G

Технические параметры

Category	Bipolar Small Signal
Collector Current (DC)	0.5(A)
Collector-Base Voltage	50(V)
Collector-Emitter Voltage	45(V)
Configuration	Single
DC Current Gain	250
Emitter-Base Voltage	5(V)
Frequency	100(MHz)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Output Power	Not Required(W)
Package Type	SC-70
Packaging	Tape and Reel
Pin Count	3
Power Dissipation	0.46(W)
Rad Hardened	No
Transistor Polarity	PNP
Brand:	onsemi
Collector- Base Voltage VCBO:	50 V
Collector- Emitter Voltage VCEO Max:	45 V
Collector-Emitter Saturation Voltage:	700 mV
Configuration:	Single
Continuous Collector Current:	-500 mA
DC Collector/Base Gain hfe Min:	250
DC Current Gain hFE Max:	600
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SC-70-3
Pd - Power Dissipation:	460 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Series:	BC807-40W
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Maximum Collector Base Voltage	-50 V
Maximum Collector Emitter Voltage	-45 V
Maximum DC Collector Current	-500 mA
Maximum Emitter Base Voltage	-5 V
Maximum Operating Frequency	100 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	460 mW
Mounting Type	Surface Mount
Number of Elements per Chip	1
Transistor Configuration	Single
Transistor Type	PNP
Вес, г	0.0062