FDD770N15A
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420 руб.
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Описание
Электроэлемент
Transistor, N-channel, PowerTrench MOSFET, 150V, 18A, 77 mOhm, 56.8W | ON Semiconductor FDD770N15A
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 2.8 ns |
| Forward Transconductance - Min | 20 S |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 18 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 56.8 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 8.4 nC |
| Rds On - Drain-Source Resistance | 61 mOhms |
| Rise Time | 3.1 ns |
| RoHS | Details |
| Series | FDD770N15A |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 15.8 ns |
| Typical Turn-On Delay Time | 10.3 ns |
| Unit Weight | 0.009184 oz |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V to 4 V |
| Width | 6.22 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2.8 ns |
| Forward Transconductance - Min: | 20 S |
| Id - Continuous Drain Current: | 18 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Pd - Power Dissipation: | 56.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 8.4 nC |
| Rds On - Drain-Source Resistance: | 61 mOhms |
| Rise Time: | 3.1 ns |
| Series: | FDD770N15A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15.8 ns |
| Typical Turn-On Delay Time: | 10.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 11.4 A |
| Maximum Drain Source Resistance | 77 mΩ |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 56.8 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 8.4 nC @ 10 V |
| Вес, г | 0.4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
