IRF820A
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см. техническую документацию
460 руб.
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360 руб.
от 5 шт. —
283 руб.
от 10 шт. —
257.04 руб.
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 500В, 1,6А, 50Вт, TO220AB Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 2.5A(Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 50W(Tc) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.5A, 10V |
| Series | - |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
| Base Product Number | IRF820 -> |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| RoHS Status | ROHS3 Compliant |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 2.5 |
| Maximum Drain Source Resistance (mOhm) | 3000 10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 50000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 13 |
| Typical Gate Charge @ 10V (nC) | 17(Max) |
| Typical Gate Charge @ Vgs (nC) | 17(Max)10V |
| Typical Input Capacitance @ Vds (pF) | 340 25V |
| Typical Rise Time (ns) | 12 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Turn-On Delay Time (ns) | 8.1 |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Resistance | 3 Ω |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 50 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220AB |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Width | 4.7mm |
| Вес, г | 2.72 |
Техническая документация
Datasheet
pdf, 1680 КБ
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Datasheet IRF820APBF
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Datasheet IRF820APBF
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Документация
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
