IRFB17N50LPBF, Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Описание Транзистор N-MOSFET, полевой, 500В, 11А, 220Вт, TO220AB Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Product Number | IRFB17 -> |
| Current - Continuous Drain (Id) @ 25В°C | 16A (Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2760pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 220W (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 9.9A, 10V |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| FET Feature | - |
| Manufacturer | Vishay Siliconix |
| Packaging | Tube |
| Part Status | Active |
| Series | - |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 16 |
| Maximum Drain Source Resistance (mOhm) | 320@10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 220000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 28 |
| Typical Gate Charge @ 10V (nC) | 130(Max) |
| Typical Gate Charge @ Vgs (nC) | 130(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 2760@25V |
| Typical Rise Time (ns) | 51 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Typical Turn-On Delay Time (ns) | 21 |
| Вес, г | 2.5 |
Техническая документация
Datasheet
pdf, 140 КБ
Datasheet
pdf, 146 КБ
Документация
pdf, 283 КБ
Datasheet IRFB17N50L, SiHFB17N50L
pdf, 285 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
