D44H11G

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310 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 250 руб.

от 10 шт. — 216 руб.

от 38 шт. — 195 руб.

Добавить в корзину 2 шт. на сумму 620 руб.

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Номенклатурный номер: 8003236956

Электроэлемент

Описание Транзистор: NPN, биполярный, 80В, 10А, 70Вт, TO220-3 Характеристики

Brand	ON Semiconductor
Collector- Base Voltage VCBO	80 V
Collector- Emitter Voltage VCEO Max	80 V
Collector-Emitter Saturation Voltage	1 V
Configuration	Single
Continuous Collector Current	10 A
DC Collector/Base Gain hfe Min	60
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	50
Gain Bandwidth Product fT	50 MHz
Height	15.75 mm
Length	10.53 mm
Manufacturer	ON Semiconductor
Maximum DC Collector Current	10 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	70 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	D44H11
Transistor Polarity	NPN
Unit Weight	0.211644 oz
Width	4.83 mm
Collector Current (Ic)	8A
Collector Cut-Off Current (Icbo)	1uA
Collector-Emitter Breakdown Voltage (Vceo)	80V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	1V@8A, 400mA
DC Current Gain (hFE@Ic,Vce)	40@4A, 1V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	1.75W
Transistor Type	NPN
Transition Frequency (fT)	85MHz
Case	TO220AB
Collector current	10A
Collector-emitter voltage	80V
Frequency	40MHz
Kind of package	tube
Mounting	THT
Polarisation	bipolar
Power dissipation	70W
Type of transistor	NPN
Maximum Collector Emitter Voltage	80 V
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	50 MHz
Maximum Power Dissipation	2 W
Minimum DC Current Gain	40
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Вес, г	2