FDC640P, Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R

FDC640P, Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R
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см. техническую документацию
53 руб.
Кратность заказа 3000 шт.
от 6000 шт.51 руб.
от 9000 шт.49 руб.
Добавить в корзину 3000 шт. на сумму 159 000 руб.
Номенклатурный номер: 8003329089
Артикул: FDC640P

Описание

Semiconductor - Discrete > Transistors > FET - MOSFET
Cloud Power Management Solutions

onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.

Технические параметры

Brand: onsemi/Fairchild
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 9 ns
Forward Transconductance - Min: 16 S
Id - Continuous Drain Current: 4.5 A
Manufacturer: onsemi
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SSOT-6
Part # Aliases: FDC640P_NL
Pd - Power Dissipation: 1.6 W
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signals
Qg - Gate Charge: 13 nC
Rds On - Drain-Source Resistance: 53 mOhms
Rise Time: 9 ns
Series: FDC640P
Subcategory: MOSFETs
Technology: Si
Tradename: PowerTrench
Transistor Polarity: P-Channel
Transistor Type: 1 P-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 12 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Voltage: -12 V, +12 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Вес, г 1

Техническая документация

Datasheet
pdf, 228 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов