STB120NF10T4
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см. техническую документацию
см. техническую документацию
5 шт. со склада г.Москва, срок 8-9 дней
1 430 руб.
от 2 шт. —
1 310 руб.
от 5 шт. —
1 210 руб.
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Альтернативные предложения2
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 100В 110A 312Вт 0,0105Ом DІPak Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 68 ns |
| Forward Transconductance - Min | 90 S |
| Height | 4.6 mm |
| Id - Continuous Drain Current | 120 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 312 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 10.5 mOhms |
| Rise Time | 90 ns |
| RoHS | Details |
| Series | STB120NF10 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 132 ns |
| Typical Turn-On Delay Time | 25 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 9.35 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Resistance | 10.5 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 312 W |
| Minimum Gate Threshold Voltage | 2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 172 nC @ 10 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 68 ns |
| Id - Continuous Drain Current: | 110 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3 |
| Pd - Power Dissipation: | 312 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 172 nC |
| Rds On - Drain-Source Resistance: | 10.5 mOhms |
| Rise Time: | 90 ns |
| Series: | STB120NF10 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 132 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1.66 |
Техническая документация
Datasheet
pdf, 1031 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 832 КБ
Datasheet STP120NF10
pdf, 380 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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