STL18N65M5
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6 шт. со склада г.Москва, срок 6-7 дней
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Альтернативные предложения1
Описание
Электроэлемент
Mosfet, N-Ch, 650V, 15A, 150Deg C, 57W Rohs Compliant: Yes |Stmicroelectronics STL18N65M5
Технические параметры
| Brand | STMicroelectronics |
| Configuration | Dual Dual Drain |
| Factory Pack Quantity | 3000 |
| Fall Time | 11 ns |
| Id - Continuous Drain Current | 15 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | PowerFLAT-5x6-HV-8 |
| Packaging | Cut Tape |
| Pd - Power Dissipation | 57 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 31 nC |
| Rds On - Drain-Source Resistance | 240 mOhms |
| Rise Time | 7 ns |
| RoHS | Details |
| Series | MDmesh M5 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 9 ns |
| Typical Turn-On Delay Time | 36 ns |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Resistance | 240 mΩ |
| Maximum Drain Source Voltage | 710 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 57 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerFLAT 5x6 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Width | 6.35mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 15 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | PowerFLAT-5x6-8 |
| Pd - Power Dissipation: | 57 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 31 nC |
| Rds On - Drain-Source Resistance: | 240 mOhms |
| Rise Time: | 7 ns |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 9 ns |
| Typical Turn-On Delay Time: | 36 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 0.1308 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1514 КБ
Datasheet STL18N65M5
pdf, 1496 КБ
Документация
pdf, 1535 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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