STD15N65M5, MOSFET N-Ch 650 V 0.308 Ohm 11A MDmesh M5
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2188 шт., срок 6-8 недель
1 450 руб.
от 10 шт. —
1 130 руб.
от 25 шт. —
1 030 руб.
от 100 шт. —
824.56 руб.
Добавить в корзину 1 шт.
на сумму 1 450 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-channel MDmesh V Power MOSFETSTMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 11 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 85 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 340 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 8 ns |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 11 A |
| Maximum Drain Source Resistance | 340 mΩ |
| Maximum Drain Source Voltage | 710 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 85 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | MDmesh M5 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Width | 6.2mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 11 |
| Maximum Drain Source Resistance (mOhm) | 340@10V |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 85000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| PPAP | No |
| Process Technology | MDmesh |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Typical Input Capacitance @ Vds (pF) | 816@100V |
| Вес, г | 0.33 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
