STGWA40HP65FB2, IGBT Transistors Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
HB/HB2 Series Insulated-Gate Bipolar TransistorsSTMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.
Технические параметры
| Brand: | STMicroelectronics |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 72 A |
| Continuous Collector Current Ic Max: | 72 A |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Gate-Emitter Leakage Current: | 250 nA |
| Manufacturer: | STMicroelectronics |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 227 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | STGWA40HP65FB2 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Current - Collector (Ic) (Max) | 72A |
| Current - Collector Pulsed (Icm) | 120A |
| Gate Charge | 153nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Part Status | Active |
| Power - Max | 227W |
| Reverse Recovery Time (trr) | 140ns |
| Series | HB2 |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 410ВµJ(off) |
| Td (on/off) @ 25В°C | -/125ns |
| Test Condition | 400V, 40A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Collector Emitter Saturation Voltage | 1.55В |
| Collector Emitter Voltage Max | 650В |
| Continuous Collector Current | 72А |
| Power Dissipation | 227Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | HB2 |
| Максимальная Рабочая Температура | 175°C |
| Монтаж транзистора | Through Hole |
| Стиль Корпуса Транзистора | TO-247 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Вес, г | 6.1 |
Техническая документация
Datasheet STGWA40HP65FB2
pdf, 512 КБ
Datasheet STGWA40HP65FB2
pdf, 494 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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