2N2405 PBFREE, Bipolar Transistors - BJT NPN Fast SW

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909 шт., срок 6-8 недель

650 руб.

от 10 шт. — 510 руб.

от 100 шт. — 458 руб.

от 500 шт. — 280.98 руб.

Добавить в корзину 1 шт. на сумму 650 руб.

Номенклатурный номер: 8004612073

Артикул: 2N2405 PBFREE

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 90V 1A 120MHz 1W Through Hole TO-39

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	120 V
Collector- Emitter Voltage VCEO Max:	90 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	1 A
DC Collector/Base Gain hfe Min:	60
DC Current Gain hFE Max:	200
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	120 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-39
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	1A
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 150mA, 10V
ECCN	EAR99
Frequency - Transition	120MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-65В°C ~ 200В°C (TJ)
Package	Bulk
Package / Case	TO-205AD, TO-39-3 Metal Can
Power - Max	1W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)	90V
Вес, г	1.01