SSM3K329R,LF, MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
U-MOSIII MOSFETsToshiba U-MOSIII MOSFETs are single and dual channel MOSFETs ideal for high-speed switching applications. These MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 2.1 S |
Id - Continuous Drain Current: | 3.5 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23F-3 |
Pd - Power Dissipation: | 1 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 1.5 nC |
Rds On - Drain-Source Resistance: | 126 mOhms |
Series: | SSM3K329 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | U-MOSIII |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 6.4 ns |
Typical Turn-On Delay Time: | 9.2 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Base Product Number | TCK301 -> |
Current - Continuous Drain (Id) @ 25В°C | 3.5A (Ta) |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 123pF @ 15V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | SOT-23-3 Flat Leads |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 126mOhm @ 1A, 4V |
RoHS Status | RoHS Compliant |
Series | U-MOSIII -> |
Supplier Device Package | SOT-23F |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±12V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 386 КБ
Datasheet SSM3K329R,LF
pdf, 231 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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