Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Nexperia › BUK9K8R7-40EX, MOSFET BUK9K8R7-40E/ ...

BUK9K8R7-40EX, MOSFET BUK9K8R7-40E/ SOT1205/LFPAK56D

Изображения служат только для ознакомления,
см. техническую документацию

2887 шт., срок 6-8 недель

300 руб.

от 10 шт. — 250 руб.

от 100 шт. — 205 руб.

от 500 шт. — 173.29 руб.

Добавить в корзину 1 шт. на сумму 300 руб.

Номенклатурный номер: 8004639816

Артикул: BUK9K8R7-40EX

Бренд: Nexperia B.V.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Automotive MOSFETs

Nexperia Automotive MOSFETs comprise a range of AEC-Q101-qualified devices that meet the stringent standards set by the automotive industry. These Nexperia automotive devices are designed for an operating environment far more hostile than power MOSFETs used in home and portable applications and are suitable for thermally demanding environments due to a +175°C rating.

Технические параметры

Brand:	Nexperia
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	1500
Fall Time:	18.2 ns
Id - Continuous Drain Current:	30 A
Manufacturer:	Nexperia
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	LFPAK-56D-8
Part # Aliases:	934067812115
Pd - Power Dissipation:	53 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15.7 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	7.66 mOhms
Rise Time:	19.8 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	20.5 ns
Typical Turn-On Delay Time:	10.8 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-15 V, +15 V
Vgs th - Gate-Source Threshold Voltage:	1.7 V
Вес, г	0.11