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SI1443EDH-T1-BE3, MOSFET 30V P-CHANNEL (D-S)

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160 руб.

от 10 шт. — 120 руб.

от 100 шт. — 62 руб.

от 1000 шт. — 39.55 руб.

Добавить в корзину 1 шт. на сумму 160 руб.

Номенклатурный номер: 8004641769

Артикул: SI1443EDH-T1-BE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET ® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK ® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Технические параметры

Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	420 ns
Id - Continuous Drain Current:	4 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-363-6
Part # Aliases:	SI1443EDH-T1-GE3
Pd - Power Dissipation:	1.6 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	28 nC
Rds On - Drain-Source Resistance:	43 mOhms
Rise Time:	220 ns
Series:	SI1
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	1800 ns
Typical Turn-On Delay Time:	125 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	1