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SI1553CDL-T1-GE3, MOSFET -20V Vds 12V Vgs SC70-6 N&P PAIR

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см. техническую документацию

150 руб.

от 10 шт. — 120 руб.

от 100 шт. — 69 руб.

от 1000 шт. — 38.96 руб.

Добавить в корзину 1 шт. на сумму 150 руб.

Номенклатурный номер: 8004641770

Артикул: SI1553CDL-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (R DS(on) ) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	13 ns
Id - Continuous Drain Current:	700 mA
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	SOT-363-6
Pd - Power Dissipation:	340 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	3 nC
Rds On - Drain-Source Resistance:	390 mOhms, 850 mOhms
Rise Time:	22 ns
Series:	SI1
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel, P-Channel
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Channel Mode	Enhancement
Channel Type	N, P
Maximum Continuous Drain Current	400 mA, 700 mA
Maximum Drain Source Resistance	1.48 Ω, 578 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	340 mW
Minimum Gate Threshold Voltage	0.6V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	SOT-363
Pin Count	6
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	1.2 nC @ 10 V, 1.9 nC @ 10 V
Width	1.35mm
Вес, г	0.01