BD244CG, Bipolar Transistors - BJT 6A 100V 65W PNP

Фото 1/4 BD244CG, Bipolar Transistors - BJT 6A 100V 65W PNP
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370 руб.
от 10 шт.290 руб.
от 100 шт.210 руб.
от 500 шт.135.76 руб.
Добавить в корзину 1 шт. на сумму 370 руб.
Номенклатурный номер: 8004651367
Артикул: BD244CG
Бренд / Производитель: ON Semiconductor***

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:-6A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:SOT-78B; Collector Emitter Saturation Voltage Vce(on):-1.5V; Continuous Collector Current Ic Max:6A; Current Ic Continuous a Max:6A; Current Ic hFE:300mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:30; No. of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:65W; Voltage Vcbo:100V

Технические параметры

Brand: onsemi
Collector- Base Voltage VCBO: 100 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 1.5 V
Configuration: Single
Continuous Collector Current: 6 A
DC Collector/Base Gain hfe Min: 30
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 50
Gain Bandwidth Product fT: 3 MHz
Manufacturer: onsemi
Maximum DC Collector Current: 6 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -65 C
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Pd - Power Dissipation: 65 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: BD244C
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Brand ON Semiconductor
Collector- Base Voltage VCBO 100 V
Collector- Emitter Voltage VCEO Max 100 V
Collector-Emitter Saturation Voltage 1.5 V
Configuration Single
Continuous Collector Current 6 A
DC Collector/Base Gain hfe Min 30
Emitter- Base Voltage VEBO 5 V
Factory Pack Quantity 50
Gain Bandwidth Product fT 3 MHz
Height 9.28 mm(Max)
Length 10.28 mm(Max)
Manufacturer ON Semiconductor
Maximum DC Collector Current 6 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -65 C
Mounting Style Through Hole
Package / Case TO-220-3
Packaging Tube
Pd - Power Dissipation 65 W
Product Category Bipolar Transistors-BJT
RoHS Details
Series BD244C
Transistor Polarity PNP
Unit Weight 0.211644 oz
Width 4.82 mm(Max)
Вес, г 6

Техническая документация

Datasheet
pdf, 113 КБ
Datasheet BD244A
pdf, 157 КБ