Главная › Электронные компоненты › Транзисторы › Биполярные (BJTs) › ST Microelectronics › BD911, Bipolar Transistors - BJT NPN General ...

BD911, Bipolar Transistors - BJT NPN General Purpose

Изображения служат только для ознакомления,
см. техническую документацию

2182 шт., срок 7-9 недель

300 руб.

от 10 шт. — 230 руб.

от 100 шт. — 167 руб.

от 500 шт. — 146.74 руб.

Добавить в корзину 1 шт. на сумму 300 руб.

Альтернативные предложения2

Номенклатурный номер: 8004672642

Артикул: BD911

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор n-p-n 100В 15A 90Вт TO220 Характеристики

Категория	Транзистор
Тип	биполярный
Вид	NPN

Технические параметры

Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	3 V
Configuration:	Single
DC Collector/Base Gain hfe Min:	15
DC Current Gain hFE Max:	150
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	3 MHz
Manufacturer:	STMicroelectronics
Maximum DC Collector Current:	15 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	90 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BD911
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
кол-во в упаковке	50
Brand	STMicroelectronics
Collector- Base Voltage VCBO	100 V
Collector- Emitter Voltage VCEO Max	100 V
Collector-Emitter Saturation Voltage	1 V
Configuration	Single
DC Collector/Base Gain hfe Min	15
DC Current Gain hFE Max	150
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	1000
Gain Bandwidth Product fT	3 MHz
Height	9.15 mm(Max)
Length	10.4 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	15 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	90 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	500V Transistors
Transistor Polarity	NPN
Width	4.6 mm(Max)
Case	TO220AB
Collector current	15A
Collector-emitter voltage	100V
Frequency	3MHz
Kind of package	tube
Mounting	THT
Polarisation	bipolar
Power dissipation	90W
Type of transistor	NPN
Вес, г	6