Главная › Электронные компоненты › Транзисторы › Биполярные с изолированным затвором (IGBTs) › ST Microelectronics › STGW80H65DFB, IGBT Transistors Trench gte ...

STGW80H65DFB, IGBT Transistors Trench gte FieldStop IGBT 650V 80A

Изображения служат только для ознакомления,
см. техническую документацию

1501 шт., срок 6-8 недель

1 960 руб.

от 10 шт. — 1 760 руб.

от 25 шт. — 1 470 руб.

от 100 шт. — 1 238.80 руб.

Добавить в корзину 1 шт. на сумму 1 960 руб.

Альтернативные предложения1

Номенклатурный номер: 8004673224

Артикул: STGW80H65DFB

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

HB/HB2 Series Insulated-Gate Bipolar Transistors STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	120 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	469 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Subcategory:	IGBTs
Technology:	Si
Brand	STMicroelectronics
Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.6 V
Configuration	Single
Continuous Collector Current at 25 C	120 A
Continuous Collector Current Ic Max	80 A
Factory Pack Quantity	600
Gate-Emitter Leakage Current	250 nA
Manufacturer	STMicroelectronics
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	469 W
Product Category	IGBT Transistors
RoHS	Details
Series	600-650V IGBTs
Technology	Si
Case	TO247-3
Collector current	80A
Collector-emitter voltage	650V
Features of semiconductor devices	integrated anti-parallel diode
Gate charge	414nC
Gate-emitter voltage	±20V
Kind of package	tube
Mounting	THT
Power dissipation	470W
Pulsed collector current	300A
Type of transistor	IGBT
Вес, г	38