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STGYA120M65DF2, IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A low loss

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600 шт., срок 6-8 недель

3 520 руб.

от 10 шт. — 2 970 руб.

от 25 шт. — 2 310 руб.

от 50 шт. — 2 297.50 руб.

Добавить в корзину 1 шт. на сумму 3 520 руб.

Номенклатурный номер: 8004673230

Артикул: STGYA120M65DF2

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	160 A
Continuous Collector Current Ic Max:	160 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	+/-250 uA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	Max247-3
Packaging:	Tube
Pd - Power Dissipation:	625 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGYA120M65DF2
Subcategory:	IGBTs
Technology:	Si
Вес, г	4.43