FGH60N60SMD, IGBT Transistors 600V/60A Field Stop IGBT ver. 2
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Описание Транзистор: IGBT, 600В, 60А, 300Вт, TO247-3 Характеристики Категория | Транзистор |
Тип | БТИЗ |
Вид | IGBT |
Технические параметры
Brand: | onsemi/Fairchild |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.9 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 120 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | onsemi |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package/Case: | TO-247 |
Packaging: | Tube |
Pd - Power Dissipation: | 600 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
REACH - SVHC: | Details |
Series: | FGH60N60SMD |
Subcategory: | IGBTs |
Technology: | Si |
Base Part Number | FGH60N60 |
Current - Collector (Ic) (Max) | 120A |
Current - Collector Pulsed (Icm) | 180A |
Gate Charge | 189nC |
IGBT Type | Field Stop |
Input Type | Standard |
Manufacturer | ON Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C(TJ) |
Package / Case | TO-247-3 |
Packaging | Tube |
Part Status | Active |
Power - Max | 600W |
Reverse Recovery Time (trr) | 39ns |
Series | - |
Supplier Device Package | TO-247-3 |
Switching Energy | 1.26mJ(on), 450ВµJ(off) |
Td (on/off) @ 25В°C | 18ns/104ns |
Test Condition | 400V, 60A, 3Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Channel Type | N |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 120 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 600 W |
Minimum Operating Temperature | -55 °C |
Package Type | TO-247AB |
Pin Count | 3 |
Transistor Configuration | Single |
Тип | IGBT транзистор 600В, 120А |
Упаковка | TUBE, 30 шт. |
Case | TO247-3 |
Collector current | 60A |
Collector-emitter voltage | 600V |
Features of semiconductor devices | integrated anti-parallel diode |
Gate-emitter voltage | ±20V |
Kind of package | tube |
Mounting | THT |
Power dissipation | 300W |
Pulsed collector current | 180A |
Type of transistor | IGBT |
Вес, г | 6.39 |
Техническая документация
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Дополнительная информация
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