BS250P, MOSFET P-Chnl 45V

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260 руб.

от 10 шт. — 200 руб.

от 100 шт. — 150 руб.

от 500 шт. — 114.64 руб.

Добавить в корзину 1 шт. на сумму 260 руб.

Номенклатурный номер: 8004674852

Артикул: BS250P

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Диод специализированный TO-92-3 Характеристики

Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Id - Continuous Drain Current:	230 mA
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	700 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Rds On - Drain-Source Resistance:	14 Ohms
Series:	BS250
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Type:	FET
Vds - Drain-Source Breakdown Voltage:	45 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	230 mA
Maximum Drain Source Resistance	14 Ω
Maximum Drain Source Voltage	45 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	3.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	700 mW
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	E-Line
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Width	2.41mm
Вес, г	0.3