ULN2003AINE4, Darlington Transistors Hi-Vltg Hi-Crnt Darl Transistor Arrays

Фото 1/3 ULN2003AINE4, Darlington Transistors Hi-Vltg Hi-Crnt Darl Transistor Arrays
Изображения служат только для ознакомления,
см. техническую документацию
160 руб.
от 10 шт.140 руб.
от 100 шт.92 руб.
Добавить в корзину 1 шт. на сумму 160 руб.
Номенклатурный номер: 8004697515
Артикул: ULN2003AINE4
Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\Darlington Transistors
ULN200xA/ULQ200xA Darlington Transistor Arrays

Texas Instruments ULN200xA/ULQ200xA High-Voltage High-Current Darlington Transistor Arrays consist of seven NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of a single Darlington pair is 500mA. The Darlington pairs can be paralleled for higher current capability. The TI ULN200xA/ULQ200xA transistor array has a 2.7kΩ series base resistor for each Darlington pair for operation directly with TTL or 5V CMOS devices. The Texas Instruments ULN200xA/ULQ200xA is designed for a variety of applications, including relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers.

Технические параметры

Brand: Texas Instruments
Collector- Emitter Voltage VCEO Max: 50 V
Configuration: Array 7
Factory Pack Quantity: Factory Pack Quantity: 2175
Manufacturer: Texas Instruments
Maximum DC Collector Current: 0.5 A
Maximum Operating Temperature: +105 C
Minimum Operating Temperature: -40 C
Mounting Style: Through Hole
Operating Temperature Range: -40 C to+105 C
Package / Case: PDIP-16
Packaging: Tube
Product Category: Darlington Transistors
Product Type: Darlington Transistors
Series: ULN2003AI
Subcategory: Transistors
Transistor Polarity: NPN
Maximum Collector Cut-off Current 0.5mA
Maximum Collector Emitter Saturation Voltage 1.6 V
Maximum Collector Emitter Voltage 50 V
Maximum Continuous Collector Current 500 mA
Maximum Operating Temperature +150 °C
Mounting Type Through Hole
Number of Elements per Chip 7
Package Type PDIP
Pin Count 16
Transistor Configuration Common Emitter
Transistor Type NPN
Width 6.6mm
Вес, г 0.95

Техническая документация

Datasheet
pdf, 1680 КБ

Дополнительная информация

Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов