IXFX120N65X2, MOSFET MOSFET 650V/120A Ultra Junction X2
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
X-Class 850V - 1000V Power MOSFETs with HiPerFET™IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 46 S |
| Id - Continuous Drain Current: | 120 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.25 kW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 225 nC |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Rise Time: | 23 ns |
| Series: | 650V Ultra Junction X2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 86 ns |
| Typical Turn-On Delay Time: | 64 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| California Prop 65 | Warning Information |
| Current - Continuous Drain (Id) @ 25В°C | 120A (Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 15500pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 1250W (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 60A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | HiPerFETв„ў -> |
| Supplier Device Package | PLUS247в„ў-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 807 КБ
Datasheet IXFX120N65X2
pdf, 806 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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