SI1029X-T1-GE3, MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Integrated MOSFET SolutionsVishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Forward Transconductance - Min: | 200 mS, 100 mS |
Id - Continuous Drain Current: | 500 mA |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SC-89-6 |
Part # Aliases: | SI1029X-GE3 |
Pd - Power Dissipation: | 280 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 750 pC, 1.7 nC |
Rds On - Drain-Source Resistance: | 1.4 Ohms, 4 Ohms |
Series: | SI1 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | N-Channel, P-Channel |
Transistor Type: | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time: | 20 ns, 35 ns |
Typical Turn-On Delay Time: | 15 ns, 20 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Channel Mode | Enhancement |
Channel Type | N, P |
Maximum Continuous Drain Current | 190 mA, 300 mA |
Maximum Drain Source Resistance | 3 Ω, 8 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 250 mW |
Minimum Gate Threshold Voltage | 1V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | SC-89-6 |
Pin Count | 6 |
Transistor Configuration | Isolated |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 1700 nC @ 15 V, 750 nC @ 4.5 V |
Width | 1.7mm |
Вес, г | 0.03 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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