SI1317DL-T1-GE3, MOSFET -20V Vds 8V Vgs SC70-3

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Номенклатурный номер: 8004729408

Артикул: SI1317DL-T1-GE3

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	7 ns
Id - Continuous Drain Current:	1.4 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-50 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-323-3
Part # Aliases:	SI1317DL-T1-BE3 SI1307EDL-T1-GE3
Pd - Power Dissipation:	280 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	4.3 nC
Rds On - Drain-Source Resistance:	150 mOhms
Rise Time:	20 ns
Series:	SI1
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	12 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Вес, г	0.01