SI1902DL-T1-GE3, MOSFET 20V .66A .27W

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150 руб.

от 10 шт. — 130 руб.

от 100 шт. — 82 руб.

от 500 шт. — 61.59 руб.

Добавить в корзину 1 шт. на сумму 150 руб.

Номенклатурный номер: 8004729412

Артикул: SI1902DL-T1-GE3

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	10 ns
Id - Continuous Drain Current:	700 mA
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package/Case:	SOT-363-6
Part # Aliases:	SI1902DL-T1-BE3
Pd - Power Dissipation:	300 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	1.2 nC
Rds On - Drain-Source Resistance:	385 mOhms
Rise Time:	16 ns
Series:	SI1
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	0.01