Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Vishay › SI2342DS-T1-GE3, MOSFET 8V Vds 5V Vgs SOT-23

SI2342DS-T1-GE3, MOSFET 8V Vds 5V Vgs SOT-23

Изображения служат только для ознакомления,
см. техническую документацию

120 руб.

от 10 шт. — 95 руб.

от 100 шт. — 69 руб.

от 500 шт. — 53.60 руб.

Добавить в корзину 1 шт. на сумму 120 руб.

Номенклатурный номер: 8004729415

Артикул: SI2342DS-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

SI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Технические параметры

Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Fall Time:	25 ns
Id - Continuous Drain Current:	6 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-23-3
Part # Aliases:	SI2342DS-T1-BE3
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	6 nC
Rds On - Drain-Source Resistance:	17 mOhms
Rise Time:	14 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	6 ns
Vds - Drain-Source Breakdown Voltage:	8 V
Vgs - Gate-Source Voltage:	-5 V, +5 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Вес, г	0.01