MMDT3904_R1_00001, Bipolar Transistors - BJT DUALNPNGENERALPURPOS ESWITCHINGTRANSISTOR VCE40V IC200mA SOT-363

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Номенклатурный номер: 8004772488

Артикул: MMDT3904_R1_00001

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Panjit
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Dual
Continuous Collector Current:	200 mA
DC Collector/Base Gain hfe Min:	100 at 10 mA, 1 V
DC Current Gain hFE Max:	300 at 10 mA, 1 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Manufacturer:	Panjit
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Pd - Power Dissipation:	225 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	DT-03TSN
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Collector-Emitter Breakdown Voltage	40V
Manufacturer	PANJIT International
Maximum DC Collector Current	200mA
Package / Case	SOT-363
Packaging	Tape & Reel(TR)
Pd - Power Dissipation	225mW
Transistor Type	2 NPN(Double)
Вес, г	0.01