MSC015SMA070B, Транзистор: N-MOSFET; SiC; полевой; 700В; 99А; Idm: 350А; 400Вт

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9 520 руб.

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Номенклатурный номер: 8011032921

Артикул: MSC015SMA070B

Бренд: Microsemi

N-канал 700V 131A (Tc) 400W (Tc) сквозное отверстие TO-247-3

Base Product Number	MSC015 ->
Current - Continuous Drain (Id) @ 25В°C	131A (Tc)
Drain to Source Voltage (Vdss)	700V
Drive Voltage (Max Rds On, Min Rds On)	20V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	215nC @ 20V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 700V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	400W (Tc)
Rds On (Max) @ Id, Vgs	19mOhm @ 40A, 20V
RoHS Status	RoHS Compliant
Supplier Device Package	TO-247-3
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+25V, -10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1
Id - Continuous Drain Current:	140 A
Manufacturer:	Microchip
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	400 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	215 nC
Rds On - Drain-Source Resistance:	19 mOhms
Subcategory:	MOSFETs
Technology:	SiC
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Vgs - Gate-Source Voltage:	-10 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Вес, г	6.14