MSC040SMA120B4, MOSFET MOSFET SIC 1200 V 40 mOhm TO-247-4
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Silicon Carbide (SiC) Schottky Barrier DiodesMicrochip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Id - Continuous Drain Current: | 66 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 323 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 137 nC |
| Rds On - Drain-Source Resistance: | 40 mOhms |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Voltage: | -10 V, +23 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 46 A |
| Maximum Drain Source Voltage | 1200 V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247-4 |
| Pin Count | 4 |
| Transistor Material | SiC |
| Вес, г | 9 |
Техническая документация
Datasheet
pdf, 1290 КБ
Datasheet MSC040SMA120B4
pdf, 1289 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
