BUL216, Bipolar Transistors - BJT NPN Hi-Volt Fast Sw

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2803 шт., срок 7-9 недель

640 руб.

от 10 шт. — 490 руб.

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Добавить в корзину 1 шт. на сумму 640 руб.

Альтернативные предложения4

Номенклатурный номер: 8004825149

Артикул: BUL216

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор NPN, биполярный, 800В, 4А, 90Вт, TO220

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	800 V
Collector-Emitter Saturation Voltage:	1 V
Configuration:	Single
Continuous Collector Current:	4 A
Emitter- Base Voltage VEBO:	9 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Manufacturer:	STMicroelectronics
Maximum DC Collector Current:	4 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	90 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BUL216
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Brand	STMicroelectronics
Collector- Base Voltage VCBO	1600 V
Collector- Emitter Voltage VCEO Max	800 V
Collector-Emitter Saturation Voltage	1 V
Configuration	Single
Continuous Collector Current	4 A
Emitter- Base Voltage VEBO	9 V
Factory Pack Quantity	1000
Height	9.15 mm(Max)
Length	10.4 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	4 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	90 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	1000V Transistors
Transistor Polarity	NPN
Width	4.6 mm(Max)
Maximum Collector Base Voltage	1600 V
Maximum Collector Emitter Voltage	800 V
Maximum Emitter Base Voltage	9 V
Maximum Power Dissipation	9 W
Minimum DC Current Gain	12
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Type	NPN
Вес, г	6