MJD117T4, Darlington Transistors PNP Power Darlington
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см. техническую документацию
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6212 шт., срок 7-9 недель
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Darlington Transistors
Описание Транзистор: PNP, биполярный, Дарлингтон, 100В, 2А, 20Вт, DPAK Характеристики Категория | Транзистор |
Тип | биполярный |
Вид | PNP |
Технические параметры
Brand: | STMicroelectronics |
Collector- Base Voltage VCBO: | 100 V |
Collector- Emitter Voltage VCEO Max: | 100 V |
Configuration: | Single |
DC Collector/Base Gain hFE Min: | 200 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Manufacturer: | STMicroelectronics |
Maximum Collector Cut-off Current: | 20 uA |
Maximum DC Collector Current: | 2 A |
Maximum Operating Temperature: | +150 C |
Mounting Style: | SMD/SMT |
Package/Case: | TO-252 |
Product Category: | Darlington Transistors |
Product Type: | Darlington Transistors |
Series: | MJD117 |
Subcategory: | Transistors |
Transistor Polarity: | PNP |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 4@40mA@4A |
Maximum Collector Base Voltage (V) | 100 |
Maximum Collector Cut-Off Current (uA) | 20 |
Maximum Collector-Emitter Saturation Voltage (V) | 3@40mA@4A|2@8mA@2A |
Maximum Collector-Emitter Voltage (V) | 100 |
Maximum Continuous DC Collector Current (A) | 2 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 20000 |
Minimum DC Current Gain | 500@500mA@3V|200@4A@3V|1000@2A@3V |
Minimum Operating Temperature (°C) | -65 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Type | PNP |
Typical Current Gain Bandwidth (MHz) | 25(Min) |
Brand | STMicroelectronics |
Collector- Base Voltage VCBO | 100 V |
Collector- Emitter Voltage VCEO Max | 100 V |
DC Collector/Base Gain hfe Min | 200 |
Emitter- Base Voltage VEBO | 5 V |
Factory Pack Quantity | 2500 |
Height | 2.4 mm |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Maximum Collector Cut-off Current | 20 uA |
Maximum DC Collector Current | 2 A |
Maximum Operating Temperature | +150 C |
Mounting Style | SMD/SMT |
Package / Case | TO-252 |
Product Category | Darlington Transistors |
RoHS | Details |
Series | MJD117T4 |
Transistor Polarity | PNP |
Width | 6.2 mm |
Maximum Base Emitter Saturation Voltage | 4 V |
Maximum Collector Base Voltage | 100 V |
Maximum Collector Emitter Saturation Voltage | 3 V |
Maximum Collector Emitter Voltage | 100 V |
Maximum Continuous Collector Current | 4 A |
Maximum Emitter Base Voltage | 5 V |
Minimum Operating Temperature | -65 °C |
Mounting Type | Surface Mount |
Package Type | DPAK(TO-252) |
Transistor Configuration | Single |
Transistor Type | PNP |
Вес, г | 1.8 |
Техническая документация
Datasheet
pdf, 379 КБ
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet
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Datasheet
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Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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