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MJE350, Bipolar Transistors - BJT PNP Medium Power

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4106 шт., срок 7-9 недель

210 руб.

от 10 шт. — 170 руб.

от 100 шт. — 114 руб.

от 500 шт. — 87.16 руб.

Добавить в корзину 1 шт. на сумму 210 руб.

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Номенклатурный номер: 8004826877

Артикул: MJE350

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: PNP, биполярный, 300В, 0,5А, 20Вт, SOT32 Характеристики

Категория	Транзистор
Тип	биполярный
Вид	PNP

Технические параметры

Brand:	STMicroelectronics
Collector- Base Voltage VCBO:	300 V
Collector- Emitter Voltage VCEO Max:	300 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	30
DC Current Gain hFE Max:	240
Emitter- Base Voltage VEBO:	3 V
Factory Pack Quantity: Factory Pack Quantity:	2000
Manufacturer:	STMicroelectronics
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	SOT-32-3
Packaging:	Tube
Pd - Power Dissipation:	20.8 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	MJE350
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Base Product Number	MJE350 ->
Current - Collector (Ic) (Max)	500mA
Current - Collector Cutoff (Max)	100ВµA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V
ECCN	EAR99
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	150В°C (TJ)
Other Related Documents	http://www.st.com/web/catalog/sense_power/FM100/CL
Package	Tube
Package / Case	TO-225AA, TO-126-3
Power - Max	20.8W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-32-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	300V
Brand	STMicroelectronics
Collector- Base Voltage VCBO	3 V
Collector- Emitter Voltage VCEO Max	300 V
Collector-Emitter Saturation Voltage	0.5 V
Configuration	Single
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	30
DC Current Gain hFE Max	240
Emitter- Base Voltage VEBO	3 V
Factory Pack Quantity	2000
Height	10.8 mm(Max)
Length	7.8 mm(Max)
Manufacturer	STMicroelectronics
Maximum DC Collector Current	0.5 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Packaging	Tube
Pd - Power Dissipation	20.8 W
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	500V Transistors
Transistor Polarity	PNP
Width	2.7 mm(Max)
Maximum Collector Base Voltage	300 V
Maximum Collector Emitter Voltage	-300 V
Maximum Emitter Base Voltage	3 V
Maximum Power Dissipation	20.8 W
Minimum DC Current Gain	30
Number of Elements per Chip	1
Package Type	SOT-32
Pin Count	3
Transistor Configuration	Single
Вес, г	0.06