STB11NM60T4, MOSFET N-Ch 600 Volt 11 Amp
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Standard Products STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 11 ns |
| Forward Transconductance - Min: | 5.2 S |
| Id - Continuous Drain Current: | 11 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 160 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 30 nC |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Rise Time: | 20 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 11A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Family | FETs-Single |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
| Mounting Type | Surface Mount |
| Other Names | 497-6545-1 |
| Other Related Documents | STB11NM60 View All Specifications |
| Package / Case | TO-263-3, D?Pak(2 Leads+Tab), TO-263AB |
| Packaging | Cut Tape(CT) |
| Power - Max | 160W |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.5A, 10V |
| Series | MDmesh™ |
| Standard Package | 1 |
| Supplier Device Package | D2PAK |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Вес, г | 4 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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