Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ST Microelectronics › STB120NF10T4, MOSFET N-Ch 100 Volt 120Amp

STB120NF10T4, MOSFET N-Ch 100 Volt 120Amp

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1256 шт., срок 7-9 недель

1 390 руб.

от 10 шт. — 1 080 руб.

от 100 шт. — 791 руб.

от 500 шт. — 653.88 руб.

Добавить в корзину 1 шт. на сумму 1 390 руб.

Альтернативные предложения2

Номенклатурный номер: 8004827767

Артикул: STB120NF10T4

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор N-МОП, полевой, 100В 110A 312Вт 0,0105Ом DІPak Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	68 ns
Id - Continuous Drain Current:	110 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	D2PAK-3
Pd - Power Dissipation:	312 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	172 nC
Rds On - Drain-Source Resistance:	10.5 mOhms
Rise Time:	90 ns
Series:	STB120NF10
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Type:	MOSFET
Typical Turn-Off Delay Time:	132 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Resistance	10.5 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	312 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	172 nC @ 10 V
Width	9.35mm
Brand	STMicroelectronics
Configuration	Single
Factory Pack Quantity	1000
Fall Time	68 ns
Forward Transconductance - Min	90 S
Height	4.6 mm
Id - Continuous Drain Current	120 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-263-3
Packaging	Reel
Pd - Power Dissipation	312 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	10.5 mOhms
Rise Time	90 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	132 ns
Typical Turn-On Delay Time	25 ns
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Вес, г	3.95